IXTP50N20P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTP50N20P


：	IXTP50N20P
：	Mosfets
：	IXYS
：	N-Channel 200 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	200V
Drain-Source On Resistance-Max:	60mΩ
Rated Power Dissipation:	360\|mW
Qg Gate Charge:	70nC
Package Style:	TO-220-3 (TO-220AB)
Mounting Method:	Through Hole

PDF(1)

50.603

2530.15

150

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6491.535

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42.5574

10639.35

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41.2605

30945.375

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40.5411

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