IXTN17N120L Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTN17N120L


：	IXTN17N120L
：	Mosfets
：	IXYS
：	Single N-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	1200V
Drain-Source On Resistance-Max:	900mΩ
Rated Power Dissipation:	540\|W
Qg Gate Charge:	155nC
Package Style:	SOT-227B
Mounting Method:	Chassis Mount

PDF(1)

884.8825

26546.475

722.2822

43336.932

707.904

63711.36

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