IXTN170P10P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTN170P10P


：	IXTN170P10P
：	Mosfets
：	IXYS
：	P-Channel 100 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	P-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	12mΩ
Rated Power Dissipation:	890\|W
Qg Gate Charge:	240nC
Package Style:	SOT-227
Mounting Method:	Chassis Mount

PDF(1)

526.3351

5263.351

460.6245

9212.49

446.6818

17867.272

442.2234

22111.17

150

421.0966

63164.49

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