IXTK200N10P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTK200N10P


：	IXTK200N10P
：	Mosfets
：	IXYS
：	N-channel 100 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	7.5mΩ
Rated Power Dissipation:	800\|mW
Qg Gate Charge:	240nC
Package Style:	TO-264
Mounting Method:	Through Hole

PDF(1)

194.9439

4873.5975

165.7615

12432.1125

100

163.897

16389.7

250

158.4355

39608.875

375

155.9835

58493.8125

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