IXTH30N60P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTH30N60P


：	IXTH30N60P
：	Mosfets
：	IXYS
：	N-Channel 600 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	600V
Drain-Source On Resistance-Max:	240mΩ
Rated Power Dissipation:	540\|W
Qg Gate Charge:	82nC
Package Style:	TO-247-3
Mounting Method:	Through Hole

PDF(1)

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