IXTH110N10L2 Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTH110N10L2


：	IXTH110N10L2
：	Mosfets
：	IXYS
：	N-Channel 100 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	18mΩ
Rated Power Dissipation:	600\|W
Qg Gate Charge:	260nC
Package Style:	TO-247-3
Mounting Method:	Through Hole

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