IXTB62N50L Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTB62N50L


：	IXTB62N50L
：	Mosfets
：	IXYS
：	Single N-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	500V
Drain-Source On Resistance-Max:	0.1Ω
Rated Power Dissipation:	800\|W
Qg Gate Charge:	550nC
Mounting Method:	Through Hole

PDF(1)

940.0956

868.6396

3474.5584

805.5227

12082.8405

782.3795

19559.4875

752.0422

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