IXFT20N100P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXFT20N100P


：	IXFT20N100P
：	Mosfets
：	IXYS
：	Single N-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	1000V
Drain-Source On Resistance-Max:	570mΩ
Rated Power Dissipation:	660\|W
Qg Gate Charge:	126nC
Package Style:	TO-268 (D3PAK)
Mounting Method:	Surface Mount

PDF(1)

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